Fast and Comprehensive Simulation Methodology for Layout-Based Power-Noise Side-Channel Leakage Analysis
Fast and Comprehensive Simulation Methodology for Layout-Based Power-Noise Side-Channel Leakage Analysis
复制标题
用于基于布局的功率噪声侧通道泄漏分析的快速、全面的仿真方法
DOI:
10.1109/ises50453.2020.00038
复制
发表时间:
2020
期刊:
影响因子:
--
通讯作者:
Kazuki Monta
中科院分区:
文献类型:
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作者:
Lang Lin;D. Selvakumaran;Deqi Zhu;N. Chang;C. Chow;M. Nagata;Kazuki Monta
Side-channel attacks can non-invasively extract secret information from hardware devices with a large number of “side-channel” measurements. For example, measuring the dynamic voltage drop of a cryptographic chip can disclose the secret keys by power-noise side-channel emission. To identify the design vulnerabilities and to verify the design countermeasures against side-channel attacks, design time simulation tools are required. However, simulation of these power-noise side-channel emissions are highly complex and computationally intensive due to the scale of the time-domain simulation and the multi-physics models involved.In this paper, we have proposed a fast and comprehensive simulation methodology for the layout based power-noise Side-Channel Leakage Analysis (SCLA). To enable fast dynamic power-noise side-channel emission simulations in time domain, a novel Direct Vector Control (DVC) method is precisely applied to security-sensitive nets to capture all sources of side-channel leakage. Further, we have enabled a location dependent power-noise SCLA to root cause the potential layout design weakness. As a case study, we have validated the proposed SCLA methodology on a test chip which has two 128-bit AES ASIC implementations (CMOS based standard-cell logic and Wave Dynamic Differential Logic (WDDL)) embedded in it. Both Simulation results in terms of measurement-to-disclosure (MTD) have been correlated with silicon measurements to demonstrate the accurate detection of side-channel leakage by our simulation framework.
DOI:
10.23919/date48585.2020.9116483
发表时间:
2020
期刊:
Design Automation and Test in Europe (DATE 2020
影响因子:
--
作者:
Knechtel, Johann;Kavun, Elif Bilge;Regazzoni, Francesco;Heuser, Annelie;Chattopadhyay, Anupam;Mukhopadhyay, Debdeep;Dey, Soumyajit;Fei, Yunsi;Belenky, Yaacov;Levi, Itamar
通讯作者:
Levi, Itamar