High Curie temperature in Eu-doped GaN caused by volume-compensated Ga-vacancy
High Curie temperature in Eu-doped GaN caused by volume-compensated Ga-vacancy
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DOI：
10.1063/1.5116054
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发表时间：
2020-02
期刊：
影响因子：
1.6
通讯作者：
A. Masago;H. Shinya;T. Fukushima;Kazunori Sato;H. Katayama‐Yoshida
中科院分区：
文献类型：
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作者：
A. Masago;H. Shinya;T. Fukushima;Kazunori Sato;H. Katayama‐Yoshida
这项研究计算表明，在Eu掺杂GaN中实验观察到的室温铁磁性是由N 2p态（即，Zener's Double Exchange.
This study computationally demonstrates that room-temperature ferromagnetism, which has been experimentally observed in Eu-doped GaN, is induced by holes in N 2p states (i.e., Zener’s double exchan...