An HBT Four-Cell Monolithic Stacked Power Amplifier
An HBT Four-Cell Monolithic Stacked Power Amplifier
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DOI：
10.1109/mwsym.2007.380312
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发表时间：
2007-06
期刊：
影响因子：
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通讯作者：
Zou-Min Tsai;Ming-Fong Lei;Huei Wang
中科院分区：
文献类型：
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作者：
Zou-Min Tsai;Ming-Fong Lei;Huei Wang
堆叠式功率合成法通过提高整个电路的偏置电压，可以同时提高输出功率和负载阻抗。对于单片电路中的多单元堆叠器件配置，串联输入和串联输出配置在物理上是可实现的。为了验证这一概念，本文用2 mHBT实现了串联输入和串联输出结构的四单元叠加式功率放大器。几乎不需要额外的匹配就可以实现功率匹配和良好的回波损耗。该放大器在5 GHz时的增益为14dBm，在4.8 GHz时的P1dBm为26dBm，饱和功率为1W。这是全单片4单元串联堆叠放大器的第一个演示。设计的简单性和整体的简单性表明，这种方法可以在许多其他电源应用中实现。
Stacked-device power combining method can simultaneously increase output power and load impedance by raising the bias voltage of the overall circuit. The series-input and series-output configuration is physically realizable for multi-cell stacked device configuration in monolithic circuits. To prove this concept, a 4-cell stacked power amplifier with series-input and series-output configuration is demonstrated in this paper using 2 m HBT. Almost no additional matching is required to achieve power match and good return loss. The amplifier shows a measured performance of 14 dB gain at 5 GHz, P1dB of 26 dBm and saturation power of 1 W at 4.8 GHz. This is the first demonstration of a fully monolithic 4-cell series stacked amplifier. The ease of design and its overall simplicity suggests that this method can be carried out in many other power applications.