Effect of Lu doping on the structure, electrical properties and energy storage performance of AgNbO3 antiferroelectric ceramics
Effect of Lu doping on the structure, electrical properties and energy storage performance of AgNbO3 antiferroelectric ceramics
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Lu掺杂对AgNbO3反铁电陶瓷结构、电学性能和储能性能的影响
DOI：
10.1007/s10854-020-03309-7
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发表时间：
2020-04-03
影响因子：
2.8
通讯作者：
Wei, Yuezhou
中科院分区：
文献类型：
--
作者：
Mao, Shuaifei;Luo, Nengneng;Wei, Yuezhou
近年来，AgNbO3反铁电陶瓷以其高储能密度和环境友好的特点引起了人们的广泛关注。为了进一步优化电性能，本工作采用传统固相法制备了Lu2O3改性AgNbO3陶瓷。晶体结构和元素分析表明，当Lu2O3含量低于2mol%时，Lu3+离子优先进入A位，否则更容易形成LuNbO4或Lu3NbO7基固溶体。一旦Lu3+离子进入A位，由于细胞体积和耐受因子的减小，观察到反铁电相的稳定性显着提高。结果，1 mol% Lu2O3 改性的 AgNbO3 陶瓷在 210 kV/cm 下实现了 3.5 J/cm3 的可恢复储能密度（Wrec），优于中等电场（< 220 kV/cm）下的其他无铅陶瓷。相信我们的研究将为AgNbO3基介质电容器的开发提供良好的参考。
Recently, AgNbO3 antiferroelectric ceramics have attracted great attention by virtue of their characters of high energy storage density and environmental friendliness. To further optimize the electrical properties, in this work, Lu2O3 modified AgNbO3 ceramics were prepared via conventional solid state method. Crystal structure and element analysis indicated the Lu3+ ion preferred to enter the A-site when Lu2O3 content was lower than 2 mol%, otherwise, it was more likely to form LuNbO4 or Lu3NbO7-based solid solutions. Remarkably improved stability of antiferroelectric phase was observed once Lu3+ ions enter into the A-site, on account of the decrease of cell volume and tolerance factor. As a consequence, an enhanced recoverable energy storage density (Wrec) of 3.5 J/cm3 was achieved in 1 mol% Lu2O3 modified AgNbO3 ceramics at 210 kV/cm, which is superior to the other lead-free ceramics under moderate electric field (< 220 kV/cm). It is believed our study will provide a good reference for the development of AgNbO3-based dielectric capacitors.