A Proposed Hydrogenation/Nitridization Passivation Mechanism for GaAs and Other III–V Semiconductor Devices, Including InGaAs Long Wavelength Photodetectors
A Proposed Hydrogenation/Nitridization Passivation Mechanism for GaAs and Other III–V Semiconductor Devices, Including InGaAs Long Wavelength Photodetectors
复制标题
拟议的 GaAs 和其他 III-V 族半导体器件（包括 InGaAs 长波长光电探测器）的氢化/氮化钝化机制
DOI：
10.1149/1.2123979
复制
发表时间：
1982
影响因子：
3.9
通讯作者：
G. Williams
中科院分区：
文献类型：
--
作者：
F. Capasso;G. Williams
提出了 的表面钝化方法，并可能扩展到 和 。因为，最近的器件工作（太阳能电池、场效应晶体管、MOS 器件和光电二极管）与实验 Ga-As-O 相图之间的相关性提供了元素表面或界面砷或氧化砷在器件性能退化中的作用的有力证据。在此基础上，提出了氢化/氮化钝化技术。去除表面As和As的反应可以在同一室中用宽带隙氮化物（例如， ）对表面进行等离子体涂覆，以进行钝化并束缚任何元素Ga。如果使用氨等离子体，则氢化和氮化步骤可以同时进行。建议使用最后一层进行长期表面保护。最近的表面处理实验数据支持了这种钝化机制。 （对于长波长光学探测器）的扩展是通过最近对 In-Ga-As-O 相图的并行测量支持的热化学计算。注意，导电氧化铟也必须被去除，如通过反应
A surface passivation method for , with possible extensions to and , is proposed. For , a correlation between recent device work (on solar cells, field effect transistors, MOS devices, and photodiodes) and the experimental Ga‐As‐O phase diagram provides strong evidence of the role of elemental surface or interface arsenic or arsenic oxide in device performance degradation. On this basis, a hydrogenation/nitridization passivation technique is proposed. The reactions to remove surface As and are The surfaces may be plasma coated in the same chamber with a wide bandgap nitride (e.g., ) for passivation and to tie up any elemental Ga. The hydrogenation and nitridization steps may be simultaneous if an ammonia plasma is used. A final layer for long‐term surface protection is recommended. Recent experimental data on surface treatments support this passivation mechanism. The extension to (for long wavelength optical detectors) is by thermochemical calculations supported by recent parallel measurements of the In‐Ga‐As‐O phase diagram. Note the conductive indium oxide must also be removed, as by the reaction