Charge defects and highly enhanced multiferroic properties in Mn and Cu co-doped BiFeO3 thin films

Charge defects and highly enhanced multiferroic properties in Mn and Cu co-doped BiFeO3 thin films
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Mn和Cu共掺杂BiFeO3薄膜中的电荷缺陷和高度增强的多铁性

DOI:
10.1016/j.apsusc.2014.02.159
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发表时间:
2014-06-30
影响因子:
6.7
通讯作者:
Ren, Huijun
Ren, Huijun
中科院分区:
材料科学1区
文献类型:
--
作者:
Dong, Guohua;Tan, Guoqiang;Ren, Huijun

文献摘要

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采用化学溶液沉积法在掺氟氧化锡(FTO)衬底上制备了纯BiFeO 3(BFO)和Mn,Cu共掺杂BiFeO 3(BFMCO)薄膜。详细研究了Mn和Cu共掺杂对BFO薄膜的晶体结构、缺陷化学、多铁性的影响。通过XRD、Rietveld精修和拉曼分析证实了Mn和Cu共掺杂后,样品的结构从菱方晶系(R3 c:H)向双相结构(R(3)c:H +Pl)转变。X射线光电子能谱(XPS)分析表明,共掺杂薄膜中Fe 2 - 7 Fe 3+和Mn 2 +/Mn 3+离子共存。同时,B位共掺杂的方式有利于抑制Fe的价态挥发,降低氧空位和漏电流。值得注意的是,共掺杂可以诱导上级的铁电性能(巨大的反射极化,2 Pr接近220 μ C/cm(2)和相对低的矫顽场,2 Ec-614 kV/cm)。Mn ~(2+)和Cu ~(2+)离子的引入通过破坏BFO薄膜的自旋旋轮线和形成两相结构,优化了BFO薄膜的磁性能。(C)© 2014 Elsevier B. V.保留所有权利。
Pure BiFeO3 (BFO) and Mn, Cu co-doped BiFeO3 (BFMCO) thin films were deposited on fluorine doped tin oxide (FTO) substrates by a chemical solution deposition method. Detailed investigations were made on the effects of Mn and Cu co-doping on the crystal structure, the defect chemistry, multiferroic properties of the BFO thin films. With the co-doping of Mn and Cu, a structural transition from the rhombohedral (R3c:H) to the biphasic structure (R(3)c:H +Pl) is confirmed by XRD, Rietveld refinement and Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows that the coexistence of Fe2-7Fe3+ and Mn2+/Mn3+ ions in the co-doping films are demonstrated. Meanwhile, the way of the co-doping at B-sits is conducive to suppress Fe valence state of volatility and to decrease oxygen vacancies and leakage current. It's worth noting that the co-doping can induce the superior ferroelectric properties (a huge remanent polarization, 2Pr similar to 220 mu C/cm(2) and a relatively low coercive field, 2Ec -614 kV/cm). The introduction of Mn2+ and Cu2+ ions optimizes the magnetic properties of BFO thin films by the biphasic structure and the destruction of spin cycloid. (C) 2014 Elsevier B.V. All rights reserved.