Growth of zinc-blend-type structure GaN from a Na–Ga melt
Growth of zinc-blend-type structure GaN from a Na–Ga melt
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从 Na-Ga 熔体生长混锌型结构 GaN
DOI：
10.1016/s0167-577x(99)00160-3
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发表时间：
2000
影响因子：
3
通讯作者：
F. Disalvo
中科院分区：
文献类型：
--
作者：
H. Yamane;M. Shimada;F. Disalvo
通过 Na-Ga 熔体中的 Ga 与 NaN3 分解产生的 N2 反应，在 570°C 200 h 下合成氮化镓 (GaN)。在 Ga-Na 熔体和 N2 气相之间的界面处，GaN 晶粒沉淀形成一层。 0.1-0.2 毫米的六方片状晶体生长在该层的 Ga-Na 熔体一侧。 X射线粉末衍射图的Rietveld分析表明，氮化硼坩埚底部析出的材料由立方GaN（混锌型，a=4.5019(1) Å）和六方GaN（纤锌矿型，a=3.1887(1) Å，c=5.1853(4) Å）组成。
Gallium nitride (GaN) was synthesized at 570°C for 200 h by the reaction of Ga in a Na–Ga melt and N2produced by the decomposition of NaN3. At the interface between the Ga–Na melt and N2gas phase, GaN grains precipitated to form a layer. Hexagonal platelet crystals of 0.1–0.2 mm grew on the Ga–Na melt side of the layer. Rietveld analysis of the X-ray powder diffraction pattern revealed that the material precipitated on the bottom of the boron nitride crucible consisted of cubic GaN (zinc-blend-type, a=4.5019(1) Å) and hexagonal GaN (wurtzite-type, a=3.1887(1) Å, c=5.1853(4) Å).