Diffusion of boron in germanium at 800–900°C
Diffusion of boron in germanium at 800–900°C
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800–900°C 硼在锗中的扩散
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
M. Dowsett
中科院分区：
文献类型：
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作者：
S. Uppal;A. Willoughby;J. Bonar;N. Cowern;T. Grasby;R. Morris;M. Dowsett
在800 ~ 900℃的温度范围内，采用植入掺杂和掺杂B的外延Ge层研究了B在Ge中的扩散。利用高分辨率二次离子质谱（SIMS）获得了炉前退火前后的浓度分布。利用TSUPREM对退火轮廓进行拟合，计算扩散系数。我们得到的扩散系数值比以前文献中报道的最低值至少低两个数量级。利用我们的值计算出了4.65（±0.3）eV的活化能。目前的实验结果表明，根据最近的理论计算，应该考虑间隙介导机制的B在Ge中的扩散。退火SIMS谱也表明，在875°C时，B在Ge中的固溶度为~ 2×1018cm−3，这与文献值一致。
Diffusion of B in Ge is studied in the temperature range 800–900°C using implantation doping and B doped epitaxial Ge layers. Concentration profiles before and after furnace annealing were obtained using high resolution secondary ion mass spectroscopy (SIMS). Diffusion coefficients were calculated by fitting the annealed profiles using TSUPREM. We obtained diffusivity values which are at least two orders of magnitude lower than the lowest values previously reported in the literature. Using our values an activation energy of 4.65(±0.3)eV is calculated. Present experimental results suggest that interstitial mediated mechanism should be considered for B diffusion in Ge in accordance with recent theoretical calculations. Annealed SIMS profiles also suggest that B solid solubility in Ge is ∼2×1018cm−3 at 875°C which agrees with literature values.