Preparation of Bulk AlN Seeds by Spontaneous Nucleation of Freestanding Crystals
Preparation of Bulk AlN Seeds by Spontaneous Nucleation of Freestanding Crystals
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DOI：
10.7567/jjap.52.08ja06
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发表时间：
2013-08-01
影响因子：
1.5
通讯作者：
Bickermann, Matthias
中科院分区：
文献类型：
--
作者：
Hartmann, Carsten;Wollweber, Juergen;Bickermann, Matthias
在射频加热炉中通过物理气相传输法（PVT）生长了独立的AlN单晶。具有2080-2200摄氏度之间的生长温度的三种不同的生长制度导致不同的晶体习性和非常高的结构质量。摇摆曲线显示在0002和100反射中的FWHM < 21弧秒。尺寸高达10 x 10 x 12 mm的等轴对称AlN晶体（3）显示出带状结构，由生长在N极性（000（1）over bar）小平面上的淡黄色核心区域和生长在棱柱形（10（1）over bar 0）小平面上的几乎无色的边缘区域组成。在两个生长区中，几乎相同的C浓度，但不同量的O和Si的二次离子质谱（西姆斯）测量。黄色核心区域显示出非常低的缺陷密度（EPD
Freestanding AlN single crystals are grown in a RF-heated furnace by physical vapor transport (PVT). Three different growth regimes with growth temperatures between 2080-2200 degrees C result in different crystal habits and very high structural quality. The Rocking curves show FWHM < 21 arcsec in the 0002 and 100 Reflection on the as-grown facets. Isometric AlN crystals with sizes up to 10 x 10 x 12 mm(3) show a zonar structure consisting of a yellowish core area which is grown on the N-polar (000 (1) over bar) facet and a nearly colorless edge region grown on prismatic (10 (1) over bar0) facets. In the two growth zones nearly the same C concentrations but different amounts of O and Si are measured by secondary ion mass spectrometry (SIMS). The yellowish core area show a very low defect density (EPD