Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice
Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice
复制标题
DOI：
10.1143/jjap.46.l833
复制
发表时间：
2007-09-01
期刊：
影响因子：
--
通讯作者：
Konagai, Makoto
中科院分区：
文献类型：
--
作者：
Kurokawa, Yasuyoshi;Tomita, Shigeki;Konagai, Makoto
通过化学计量氢化非晶碳化硅(a-SiC:H)/富硅氢化非晶碳化硅（a-Si1+xC:H）多层膜的热退火制备了尺寸可控的硅量子点超晶格（Si-QDSLs）。透射电镜（TEM）观察发现，硅量子点仅在a-Si1+xC:H层中形成。硅量子点的大小可以通过a-Si1+xC:H层的厚度来控制。发现氢等离子体处理（HPT）显著增强了Si-QDSLs的光致发光。随着Si-QDSL中硅量子点直径的减小，发光峰向波长更短的方向移动。
We prepared size-controlled silicon quantum dots superlattices (Si-QDSLs) by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/silicon-rich hydrogenated amorphous silicon carbide (a-Si1+xC:H) multilayers. Transmission electron microscope (TEM) observation revealed that silicon quantum dots were formed, in only a-Si1+xC:H layers. The size of silicon quantum dots can be controlled by the thickness of the a-Si1+xC:H layers. It was found that hydrogen plasma treatment (HPT) significantly enhanced the photoluminescence of the Si-QDSLs. The luminescence peaks shifted to shorter wavelength with decreasing the diameter of the silicon quantum dots in the Si-QDSL.