Nickel-titanium-based contact for n-type silicon carbide to combine high ohmic conductivity and mechanical properties
Nickel-titanium-based contact for n-type silicon carbide to combine high ohmic conductivity and mechanical properties
复制标题
用于 n 型碳化硅的镍钛基触点，结合了高欧姆电导率和机械性能
DOI：
10.1088/1757-899x/61/1/012031
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
M. Sano and Y. Takahashi
中科院分区：
文献类型：
--
作者：
M. Maeda;M. Sano and Y. Takahashi
本文报道了一种改善n型4H-SiC型镍基欧姆触头材料电性能的方法。在碳化硅衬底上沉积了只改变钛层厚度的Ni/Ti双层膜，并在1273K真空中进行了很短时间的热处理。用X射线衍射仪对其界面结构进行了分析。分别用直流电导测试和恒载划痕测试测试了材料的电学性能和力学性能。在Ni表面形成合适厚度的TiC层可以改善材料的力学性能，同时通过形成TiC而不是游离碳来保持材料的电学性能。
This paper reports a method to improve mechanical properties retaining the electrical properties of Ni-based ohmic contact material for n-type 4H-SiC. Ni/Ti bilayered films varying only in the thickness of the Ti layer were deposited on SiC substrates and annealed at 1273 K for a very short time in vacuum. The interfacial structures were analyzed by X-ray diffraction. The electrical and mechanical properties were measured by DC conduction test and constant-load scratch test, respectively. An appropriate thickness of the Ti layer on Ni improves the mechanical properties retaining the electrical properties by forming TiC instead of the free carbon.