Characterization of Programmable Charge-Trap Transistors (CTTs) in Standard 28-nm CMOS for Nonvolatile Memory and Analog Arithmetic Applications
Characterization of Programmable Charge-Trap Transistors (CTTs) in Standard 28-nm CMOS for Nonvolatile Memory and Analog Arithmetic Applications
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DOI：
10.1109/jxcdc.2021.3098469
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发表时间：
2021
影响因子：
2.4
通讯作者：
Mau-Chung Frank Chang
中科院分区：
文献类型：
--
作者：
Yuan Du;Li Du;Wuyu Fan;Yang Xiao;Mau-Chung Frank Chang
