Quantum Oscillations and High Carrier Mobility in the Delafossite PdCoO2
Quantum Oscillations and High Carrier Mobility in the Delafossite PdCoO2
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DOI：
10.1103/physrevlett.109.116401
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发表时间：
2012-09-10
影响因子：
8.6
通讯作者：
Yelland, Edward A.
中科院分区：
文献类型：
--
作者：
Hicks, Clifford W.;Gibbs, Alexandra S.;Yelland, Edward A.
我们展示了铜铁矿 PdCoO2 单晶的 de Haas-van Alphen 和电阻率数据。在 295 K 温度下，我们测得面内电阻率为 2.6 μΩ cm，这使得 PdCoO2 成为已知导电性最强的氧化物。低温面内电阻率具有激活的而不是通常的 T-5 温度依赖性，表明有效散射的间隙与声子阻力一致。低于 10 K 时，传输平均自由程类似于 20 μm，大约为 10(5) 个晶格间距，对于助熔剂生长的晶体来说，这是一个惊人的高值。我们根据我们的数据讨论这些属性的起源。
We present de Haas-van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6 mu Omega cm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T-5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is similar to 20 mu m, approximately 10(5) lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.