High post-annealing stability for perpendicular [Co/Ni](n) multilayers by preventing interfacial diffusion
High post-annealing stability for perpendicular [Co/Ni](n) multilayers by preventing interfacial diffusion
复制标题
通过防止界面扩散，实现垂直 [Co/Ni](n) 多层的高退火后稳定性
DOI：
10.1088/0022-3727/49/18/185004
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Yu Guang-Hua
中科院分区：
文献类型：
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作者：
Li Xu-Jing;Jiang Shao-Long;Zhang Jing-Yan;Han Gang;Liu Qian-Qian;Liu Yi-Wei;Wang Dong-Wei;Feng Chun;Li Ming-Hua;Yu Guang-Hua
本文报道了通过在Co/Ni界面引入合适厚度的铜隔离层，[Co/Cu/Ni]n多层膜的垂直磁各向异性可以在高达400℃的温度下保持，这意味着具有很高的后退火稳定性。X射线反射率结果表明，含铜间隔的多层膜具有良好的多层结构，表明Co和Ni的弱混合，这是提高垂直磁各向异性后退火稳定性的重要原因之一。这一结果对于需要与互补金属氧化物半导体相结合的平面外磁化自旋电子器件具有重要意义。
This paper reports that by introducing an appropriate thickness of Cu spacer at a Co/Ni interface, the perpendicular magnetic anisotropy of [Co/Cu/Ni] n multilayers can be maintained at the annealing temperature as high as 400 C, implying high post-annealing stability. X-ray reflectivity results demonstrate that the multilayers with Cu spacer exhibit good multilayer structure, indicating the weak intermixing of Co and Ni, which is one important reason for the enhanced post-annealing stability of perpendicular magnetic anisotropy. The result is of great importance for out-of-plane magnetized spintronic devices which need to be combined with complementary metal-oxide semiconductors.