Self-Positioned Nanosized Mask for Transparent and Flexible Ferroelectric Polymer Nanodiodes Array.
Self-Positioned Nanosized Mask for Transparent and Flexible Ferroelectric Polymer Nanodiodes Array.
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DOI：
10.1021/acsami.6b08459
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发表时间：
2016-09
影响因子：
9.5
通讯作者：
Seung Hyun;Owoong Kwon;Chungryong Choi;Kanniyambatti L. Vincent Joseph;Yunseok Kim;J. Kim
中科院分区：
文献类型：
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作者：
Seung Hyun;Owoong Kwon;Chungryong Choi;Kanniyambatti L. Vincent Joseph;Yunseok Kim;J. Kim
铁电聚合物纳米二极管的高密度阵列在下一代透明和柔性非易失性电阻存储器中获得了强烈的关注。在这里，我们介绍了一种简单的和创新的方法，通过使用嵌段共聚物自组装和氧等离子体刻蚀在ITO涂层的聚（对苯二甲酸乙二醇酯）（PET）衬底上制备铁电聚合物纳米二极管阵列。首先，将聚苯乙烯-嵌段-聚（2-乙烯基吡啶）共聚物（PS-b-P2 VP）胶束旋涂在聚（偏氟乙烯-然-三氟乙烯）共聚物（P（VDF-TrFE））膜/ITO涂层PET基底上。在将样品浸入含有金前体（HAuCl 4）的溶液中之后，进行氧等离子体蚀刻，所述金前体与P2 VP中的氮基团强配位。在等离子体蚀刻期间，配位的金前体变成金纳米颗粒（GNP），其成功地充当自定位蚀刻掩模以制造具有顶部的GNP的P（VDF-TrFE））纳米岛的高密度阵列。每个纳米岛都清楚地显示出各自的二极管特性，如电流-电压（I-V）曲线所证实的。此外，由于P（VDF-TrFE）纳米岛以及衬底的透明和柔性性质，P（VDF-TrFE）纳米二极管阵列是高度透明的，并且即使在大量弯曲（例如，1000次）之后也保持二极管性质。该阵列可作为下一代透明、灵活的非易失性存储器件。
High density arrays of ferroelectric polymer nanodiodes have gained strong attention for next-generation transparent and flexible nonvolatile resistive memory. Here, we introduce a facile and innovative method to fabricate ferroelectric polymer nanodiode array on an ITO-coated poly(ethylene terephthalate) (PET) substrate by using block copolymer self-assembly and oxygen plasma etching. First, polystyrene-block-poly(2-vinylpyridine) copolymer (PS-b-P2VP) micelles were spin-coated on poly(vinylidene fluoride-ran-trifluoroethylene) copolymer (P(VDF-TrFE)) film/ITO-coated PET substrate. After the sample was immersed in a gold precursor (HAuCl4) containing solution, which strongly coordinates with nitrogen group in P2VP, oxygen plasma etching was performed. During the plasma etching, coordinated gold precursors became gold nanoparticles (GNPs), which successfully acted as self-positioned etching mask to fabricate a high density array of P(VDF-TrFE)) nanoislands with GNP at the top. Each nanoisland shows clearly individual diode property, as confirmed by current-voltage (I-V) curve. Furthermore, due to the transparent and flexible nature of P(VDF-TrFE)) nanoisland as well as the substrate, the P(VDF-TrFE) nanodiode array was highly tranparent, and the diode property was maintained even after a large number of bendings (for instance, 1000 times). The array could be used as the next-generation tranparent and flexible nonvolatile memory device.