An Area Selective and Anisotropic Etching of Si by Synchrotron Radiation Excitation: Effects of Introducing O2 Molecules
An Area Selective and Anisotropic Etching of Si by Synchrotron Radiation Excitation: Effects of Introducing O2 Molecules
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同步辐射激发硅的区域选择性和各向异性蚀刻：引入 O2 分子的影响
DOI：
10.1143/jjap.31.4449
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
Shigeo Suzuki Tanaka
中科院分区：
文献类型：
--
作者：
T. Goto;O. Kitamura;S. Terakado;Shigeo Suzuki Tanaka
在微波放电产生的反应物种的存在下，单晶硅的同步辐射（SR）的光化学蚀刻。蚀刻气体是SF6和Ar的混合物。我们尝试引入O2气体，以通过保护未照射区域来增加区域选择性。结果发现，O2分子的引入是非常有效的抑制蚀刻的非照射区域导致高的区域选择性。此外，通过添加O2分子获得了c-Si的各向异性特征，并且使用模板掩模成功地进行了亚微米图案化。通过测量总电子产额谱和俄歇电子谱研究了O2分子的影响。这似乎是在c-Si表面上的氧化物层的形成区域选择性蚀刻中发挥了重要作用。
Single crystalline silicon was photochemically etched by synchrotron radiation (SR) in the presence of reactive species produced by microwave discharge. The etching gases were a mixture of SF6 and Ar. We attempted to introduce O2 gas in order to increase the area selectivity by protecting the nonirradiated area. It was found that the introduction of O2 molecules was very effective in depressing the etching of a nonirradiated area resulting in high area selectivity. Also an anisotropic feature of c-Si was obtained by addition of O2 molecules and submicron patterning was successfully performed using a stencil mask. The effect of O2 molecules was investigated by the measurement of the spectra of total electron yield and Auger electrons. It seems that the formation of an oxide layer on c-Si surface played an important role in the area-selective etching.