Enhancement of excitonic emission in semiconductor heterostructures due to resonant coupling to multipole plasmon modesin a gold particle
Enhancement of excitonic emission in semiconductor heterostructures due to resonant coupling to multipole plasmon modesin a gold particle
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由于金颗粒中多极等离子体激元模式的共振耦合，半导体异质结构中激子发射的增强
DOI：
10.1103/physrevb.84.085323
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
A.A.Toropov,T.V.Shubina,K.G.Belyaev,S.V.Ivanov,and P.S.Kop'ev,Y.Ogawa,F.Minami
中科院分区：
文献类型：
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作者：
Y. Arashida;Y. Ogawa;and F. Minami;後藤雄二;A.A.Toropov,T.V.Shubina,K.G.Belyaev,S.V.Ivanov,and P.S.Kop'ev,Y.Ogawa,F.Minami
我们应用一个精确的电动力学理论来分析实验数据的发射增强外延半导体结构，诱导的共振相互作用的发射激子与等离子体激元定位在金纳米粒子。采用近场扫描光学显微镜研究了金粒子对InGaN薄膜和分子束外延制备的CdSe/ZnSe量子点异质结的影响。结果表明，常用的准静态近似是无法解释的实验数据，由于无法考虑高阶多极等离子体共振的贡献。特别是，它遵循从所执行的计算，所观察到的效果的发射增强主要归功于与球形金粒子中的四极和八极等离子体激元模式的共振相互作用。提出了优化的金属-半导体结构的设计。
We apply an exact electrodynamic theory to analyze experimental data on the emission enhancement in epitaxial semiconductor structures, induced by resonant interaction of emitting excitons with plasmons localized in a gold nanoparticle. Near-field scanning optical microscopy was employed to investigate the effect of the gold particle positioned near the surface of a rough InGaN film or a CdSe/ZnSe quantum dot heterostructure fabricated by molecular-beam epitaxy. It is shown that the frequently used quasistatic approximation is unable to explain the experimental data due to the inability to take into consideration the contribution of higher-order multipole plasmon resonances. In particular, it follows from the performed calculations that the observed effect of the emission enhancement owes mainly to the resonant interaction with the quadrupole and octupole plasmon modes in the spherical gold particle. The design of optimized metal-semiconductor structures is proposed.