Surface photovoltage effect and its time dependence in GaAs-GaAsP superlattice studied with combination of synchrotron and laser radiation
Surface photovoltage effect and its time dependence in GaAs-GaAsP superlattice studied with combination of synchrotron and laser radiation
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DOI：
10.1063/1.1632548
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发表时间：
2004-01
影响因子：
3.2
通讯作者：
Senku Tanaka;T. Nishitani;T. Nakanishi;S. Moré;J. Azuma;Kazutoshi Takahashi;O. Watanabe;M. Kamada
中科院分区：
文献类型：
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作者：
Senku Tanaka;T. Nishitani;T. Nakanishi;S. Moré;J. Azuma;Kazutoshi Takahashi;O. Watanabe;M. Kamada
利用同步辐射和激光相结合的芯能级光电子能谱测量了GaAs-GaAsP超晶格（SL）的表面光电压（SPV）效应及其时间分布。结果发现，与体GaAs相比，SL中的SPV效应被显著抑制。SL和散装样品之间的SPV的时间分布的差异被观察到在微秒范围内。在负电子亲和势表面的SL的SPV效应的抑制也被观察到。结果表明，具有高掺杂表面层的超晶格适合作为自旋极化电子源，且不存在SPV效应。
The surface photovoltage (SPV) effect and its temporal profiles in a GaAs–GaAsP superlattice (SL) were measured by core-level photoelectron spectroscopy with the combination of synchrotron radiation and laser. It was found that the SPV effect in the SL is remarkably suppressed as compared with that in a bulk GaAs. The difference in the temporal profile of the SPV between SL and bulk samples was observed in microsecond range. The suppression of the SPV effect in the negative electron affinity surfaces of the SL was also observed. It is concluded that the SL with a high-doping surface layer is suitable for the spin-polarized electron source without the SPV effect.