Critical Growth Rate of Hydrate Crystal Growth Inhibitors in the Low Growth Rate Region
Critical Growth Rate of Hydrate Crystal Growth Inhibitors in the Low Growth Rate Region
复制标题
水合物晶体生长抑制剂在低生长速率区域的临界生长速率
DOI:
10.1021/acs.cgd.1c00421
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发表时间:
2021
期刊:
影响因子:
--
通讯作者:
Suzuki Kiyofumi
中科院分区:
文献类型:
--
作者:
Muraoka Michihiro;Kelland Malcolm A.;Yamamoto Yoshitaka;Suzuki Kiyofumi
We tested poly(N-vinylpyrrolidone) (PVP) K-12, K-15, K-30, K-90, poly(N-vinylcaprolactam) (PVCap), tetrapentylammonium bromide (TPeAB), tetrabutylammonium bromide (TBPB), polyacryloylpyrrolidine (PAP), poly(N-isopropylmethacrylamide) (PNIPMAM), and hyperbranched polyesteramide (PEA) as hydrate crystal growth inhibitors (HCGIs). We used a tetrahydrofuran (THF) sII hydrate system using a unidirectional growth apparatus. The HCGI concentrationc= 0.5 wt % and the growth rateVranged from 0.005 to 10 μm s–1. The growth rates of TPeAB, PVP K-12, K-15, TBPB, and PEA were found to be critical in the region of a low growth rate with the degree of supercooling ΔTapproaching 0. However, PVP K-30, K-90, PAP, PNIPMAM, and PVCap remained effective atV= 0.005 μm s–1. These results enhance the persuasiveness for the model that the HCGI effect is explained by the residence time on the crystal surface of HCGI, τ, and time intervalt* required to increase the interface curvature. In addition, we determined the threshold growth rate of THF hydrate for examining HCGI performance on sII gas hydrate. Thus, when 0.005 ≤ critical growth rateV* < 0.01 μm s–1, the HCGIs are moderate inhibitors on sII gas hydrate. WhenV* < 0.005 μm s–1, the HCGIs are strong inhibitors on sII gas hydrate.
影响因子:
3.8
作者:
Muraoka Michihiro;Kelland Malcolm A.;Yamamoto Yoshitaka;Tenma Norio
通讯作者:
Tenma Norio
DOI:
10.1016/j.egypro.2019.01.585
发表时间:
2019
期刊:
Energy Procedia
影响因子:
--
作者:
S. Seo;H. Paik;K. Kang;M. Kelland;Ju Dong Lee
通讯作者:
Ju Dong Lee