Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D022-Mn3Ge film
Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D022-Mn3Ge film
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顶部电极由垂直磁化的 D022-Mn3Ge 薄膜组成的全外延磁隧道结中的隧道磁阻
DOI：
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
S. Mizukami
中科院分区：
文献类型：
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作者：
A. Sugihara;Kazuya Z. Suzuki;T. Miyazaki;S. Mizukami
以Co-Fe合金薄膜为种子层，生长了一种上电极为Mn3Ge薄膜的磁性隧道结。X-射线衍射分析表明，在(001)衬底上外延生长的Mn3Ge具有(001)取向的D022结构。磁滞回线表明D022-Mn3Ge薄膜具有垂直磁各向异性。在室温下，制备的MTJ的磁阻率为11.3%。电阻-场曲线表明，TOP-Co-Fe层和D022-Mn3Ge层是弱耦合的反铁磁层。优化TOP-Co-Fe成分可提高磁流变率。
We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co–Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D022 structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D022-Mn3Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance–field curve suggested that the top-Co–Fe and D022-Mn3Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co–Fe composition would improve MR ratio.
影响因子：
4
作者：
Balke, Benjamin;Fecher, Gerhard H.;Felser, Claudia
通讯作者：
Felser, Claudia