A combined silicon fusion and glass/silicon anodic bonding process for a uniaxial capacitive accelerometer
A combined silicon fusion and glass/silicon anodic bonding process for a uniaxial capacitive accelerometer
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DOI：
10.1088/0960-1317/2/3/009
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发表时间：
1992-09
影响因子：
2.3
通讯作者：
E. Peeters;S. Vergote;B. Puers;W. Sansen
中科院分区：
文献类型：
--
作者：
E. Peeters;S. Vergote;B. Puers;W. Sansen
提出了一种将多晶圆键合和差分电容测量结合到点对称设计中的高性能加速度传感器概念。加速度计是采用Si/Si融合键合和Si/玻璃阳极键合相结合实现的四层玻璃/Si/Si/玻璃结构。融合键与晶圆对晶圆对准进行了预处理硅。玻璃盖以极性反转的单一阳极键合顺序键合在晶圆片两侧。该器件的主要特点是对单轴上的平移加速度分量的专属响应，以及对给定芯片区域的最大灵敏度。可修改的阻尼特性和因此可调的带宽是附加的器件特征。这是通过控制玻璃盖阳极粘合过程中的气体压力和成分来实现的。
A high performance acceleration sensor concept is presented, which combines multiple wafer bonding and differential capacitance measurement into a point-symmetrical design. The accelerometer is a four-layer glass/Si/Si/glass structure realized with a combination of Si/Si fusion bonding and Si/glass anodic bonding. Fusion bonding with wafer-to-wafer alignment is performed on preprocessed silicon. Glass covers are bonded onto both wafer sides in a single anodic bonding sequence with polarity reversal. The main device characteristics are an exclusive response to a translational acceleration component in a single axis and maximized sensitivity for a given chip area. Modifiable damping characteristics and hence adjustable bandwidth is an additional device feature. This is obtained by controlling the gas pressure and composition during anodic bonding of the glass covers.