High-temperature post-annealing effect on the surface morphology and photoresponse and electrical properties of B-doped BaSi2 films grown by molecular beam epitaxy under various Ba-to-Si deposition rate ratios
High-temperature post-annealing effect on the surface morphology and photoresponse and electrical properties of B-doped BaSi2 films grown by molecular beam epitaxy under various Ba-to-Si deposition rate ratios
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DOI：
10.1016/j.jcrysgro.2021.126429
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发表时间：
2021-11
影响因子：
1.8
通讯作者：
Shunsuke Narita;Y. Yamashita;S. Aonuki;N. Saitoh;K. Toko;T. Suemasu
中科院分区：
文献类型：
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作者：
Shunsuke Narita;Y. Yamashita;S. Aonuki;N. Saitoh;K. Toko;T. Suemasu
