Field-Effect Transistors Based on van-der-Waals-Grown and Dry-Transferred All-Inorganic Perovskite Ultrathin Platelets
Field-Effect Transistors Based on van-der-Waals-Grown and Dry-Transferred All-Inorganic Perovskite Ultrathin Platelets
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基于范德华生长和干转移的全无机钙钛矿超薄片的场效应晶体管
DOI：
10.1021/acs.jpclett.7b02028
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发表时间：
2017-10-05
影响因子：
5.7
通讯作者：
Zeng, Haibo
中科院分区：
文献类型：
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作者：
Huo, Chengxue;Liu, Xuhai;Zeng, Haibo
目前，钙钛矿晶体管的研究仍处于起步阶段，尽管钙钛矿基太阳能电池和发光二极管已被广泛研究。在获得可靠的钙钛矿晶体管之前存在两个主要障碍：对极性溶剂敏感的加工困难和晶体管平台上钙钛矿质量不令人满意。在这里，我们第一次报道了高性能的全无机钙钛矿FET，它既利用了货车瓦外延无边界单晶，又利用了无化学污染的完全干法转移技术。这两个关键因素确保了前所未有的高质量钙钛矿通道。所获得的FET空穴迁移率和开关比分别达到0.32 cm（2）V-1 s（-1）和6.7 × 10（3）。在低温下，迁移率和开关比分别提高到1.04 cm（2）V ~（-1）s（-1）和1.3 × 10 ~（4）。这项工作可以为基于钙钛矿单晶的FET应用打开大门。
Nowadays, the research on perovskite transistors is still in its infancy, despite the fact that perovskite-based solar cells and light-emitting diodes have been widely investigated. Two major hurdles exist before obtaining reliable perovskite-based transistors: the processing difficulty for their sensitivity to polar solvents and unsatisfactory perovskite quality on the transistor platform. Here, for the first time, we report on high-performance all-inorganic perovskite FETs profiting from both van der Waals epitaxial boundary-free ultrathin single crystals and completely dry-processed transfer technique without chemical contaminant. These two crucial factors ensure the unprecedented high-quality perovskite channels. The achieved FET hole mobility and on-off ratio reach 0.32 cm(2) V-1 s(-1) and 6.7 x 10(3), respectively. Moreover, at the low temperature, the mobility and on-off ratio can be enhanced to be 1.04 cm(2) V-1 s(-1) and 1.3 X 10(4). This work could open the door for the FET applications based on perovskite single crystals.