Residual stress in Ni-Mn-Ga thin films deposited on different substrates
Residual stress in Ni-Mn-Ga thin films deposited on different substrates
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DOI：
10.1140/epjst/e2008-00660-8
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发表时间：
2008-05-01
影响因子：
2.8
通讯作者：
Ohtsuka, M.
中科院分区：
文献类型：
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作者：
Doyle, S.;Chernenko, V. A.;Ohtsuka, M.
四个系列的Ni(51.4)Mn(28.3)Ga(20.3)/基底薄膜复合材料，其中基底是Si(100)、MgO(100)、氧化铝或Mo箔，以及两个系列的Ni(53.5)Mn(23.8)Ga(22.7)/基底复合材料，其中基底是氧化铝或Mo箔，不同的膜厚度从0.1到0.1不等。通过 XRD 应力测量研究了立方相中的 5 μm。发现残余应力值取决于基材和薄膜厚度。在亚微米范围内，通过实验获得了残余应力与转变温度的厚度依赖性之间的相关性。研究了沉积在 Si(100) 上的薄膜的 d 间距 d(220) 的温度依赖性。
Four series of Ni(51.4)Mn(28.3)Ga(20.3)/substrate thin film composites, where the substrate is either Si(100), MgO(100), alumina or Mo foil, and two series of Ni(53.5)Mn(23.8)Ga(22.7)/substrate composites where the substrate is either alumina or Mo foil, with different film thicknesses varying from 0.1 to 5 mu m have been studied in the cubic phase by XRD stress measurements. The values of residual stresses are found to be dependent on both substrate and film thickness. In the submicron range, a correlation between thickness dependencies of residual stress and transformation temperatures is experimentally obtained. The temperature dependence of the d-spacing d(220) is studied for the films deposited on Si(100).