Large-area high-quality single crystal diamond
Large-area high-quality single crystal diamond
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DOI：
10.1557/mrs.2014.96
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发表时间：
2014-06-01
期刊：
影响因子：
5
通讯作者：
Fujimori, Naoji
中科院分区：
文献类型：
--
作者：
Schreck, Matthias;Asmussen, Jes;Fujimori, Naoji
钻石提供了一种独特的极端物理特性组合。对于许多技术应用，需要最高晶体质量的钻石样品来利用材料的最终潜力。特别是，在多晶薄膜中，必须避免晶界。本文介绍了目前化学气相沉积法合成单晶金刚石的两种主要方法。在同外延中，高气压和高功率密度的微波放电有利于生长速度超过50 μ m/h，这是沉积mm厚单晶样品的基础。克隆和平铺之后的同外延过度生长是有希望的新概念，旨在增加横向尺寸。在外来材料的大面积单晶上的异质外延沉积是第二种可选方法。总结了这两个概念的现状，并讨论了当前以及潜在的未来应用。
Diamond offers a unique combination of extreme physical properties. For many technological applications, diamond samples of the highest crystal quality are required to utilize the ultimate potential of the material. Specifically, grain boundaries, as in polycrystalline films, have to be avoided. In this article, the two major current approaches of synthesizing single crystal diamond by chemical vapor deposition are described. In homoepitaxy, high gas pressure and high power density microwave discharges facilitating growth rates above 50 mu m/h form the basis for the deposition of mm-thick single crystal samples. Cloning and tiling followed by homoepitaxial overgrowth are promising novel concepts aimed at an increase in the lateral dimensions. Heteroepitaxial deposition on large-area single crystals of a foreign material represents a second alternative approach. The state of the art for both concepts is summarized, and current as well as potential future applications are discussed.