“INTPIX4NA” ? new integration-type silicon-on-insulator pixel detector for imaging application

“INTPIX4NA” ? new integration-type silicon-on-insulator pixel detector for imaging application
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“INTPIX4NA”?用于成像应用的新型集成型绝缘体上硅像素探测器

DOI:
10.1088/1748-0221/16/08/p08054
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发表时间:
2021
影响因子:
1.3
通讯作者:
Miyoshi T.
Miyoshi T.
中科院分区:
工程技术4区
文献类型:
--
作者:
Nishimura R.;Kishimoto S.;Sasaki T.;Mitsui S.;Shinya M.;Arai Y.;Miyoshi T.

文献摘要

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INTPIX 4 NA是一种集成型绝缘体上硅像素探测器。该探测器的灵敏面积为14.1× 8.7mm2,像素数为425,984(832列× 512行),像素尺寸为17× 17 μ m2.该检测器是为使用X射线(cos α法)测量残余应力而开发的。用光子工厂(KEK)的同步加速器光束线测试了INTPIX 4 NA的性能,得到了以下结果。在奈奎斯特频率(29.4 cycle/mm)下,调制传递函数(空间分辨率的指数)大于50%。从收集的电荷计数分析的能量分辨率为35.3%-46.2%在5.415 keV,21.7%-35.6%在8 keV,15.7%-19.4%在12 keV。即使在室温(约25-27 ℃)下5.415 keV的低能量下,X射线信号也可以与噪声分离。在当前的测量系统中,可以保持信号质量的最大帧速率为153 fps。这些结果满足了在空气中和在室温(约25-27 ℃)条件下的所需性能,该条件是为残余应力测量的环境假设的。
INTPIX4NA is an integration-type silicon-on-insulator pixel detector. This detector has a 14.1× 8.7 mm 2 sensitive area, 425,984 (832 column× 512 row matrix) pixels and the pixel size is 17× 17 μm 2. This detector was developed for residual stress measurement using X-rays (the cos α method). The performance of INTPIX4NA was tested with the synchrotron beamlines of the Photon Factory (KEK), and the following results were obtained. The modulation transfer function, the index of the spatial resolution, was more than 50% at the Nyquist frequency (29.4 cycle/mm). The energy resolution analyzed from the collected charge counts is 35.3%–46.2% at 5.415 keV, 21.7%–35.6% at 8 keV, and 15.7%–19.4% at 12 keV. The X-ray signal can be separated from the noise even at a low energy of 5.415 keV at room temperature (approximately 25–27 C). The maximum frame rate at which the signal quality can be maintained is 153 fps in the current measurement system. These results satisfy the required performance in the air and at room temperature (approximately 25–27 C) condition that is assumed for the environment of the residual stress measurement.