Growth of large-scale two-dimensional insulator Na2Ta4O11through chemical vapor deposition
Growth of large-scale two-dimensional insulator Na2Ta4O11through chemical vapor deposition
复制标题
化学气相沉积法生长大尺寸二维绝缘体Na2Ta4O11
DOI：
10.1088/1674-4926/41/7/072901
复制
发表时间：
2020-07-01
影响因子：
5.1
通讯作者：
Liu, Song
中科院分区：
文献类型：
--
作者：
Jin, Yuanyuan;Li, Huimin;Liu, Song
绝缘体Na_2Ta_4O_（11）被认为是一种很有潜力的光催化剂。然而，很少有人注意到的Na 2Ta 4O 11纳米粒子的合成，更不用说二维（2D）层状Na 2Ta 4O 11薄片的生长，这可能会带来创新的性能和有前途的应用。在这里，2D薄层Na2Ta4O11薄片首次通过化学气相沉积（CVD）方法制备，具有目前报道的最小厚度。我们还合成了超过100 μm的2D片状Na_2Ta_4O_（11），这是迄今为止报道的超过2D水平的最大值。我们的工作为其他二维金属氧化物材料的合成提供了新的策略，并赋予Na2Ta4O11更多的性能和应用。
The insulator Na2Ta4O11 has been considered as a potential photocatalyst. However, little attention has been given to the synthesis of Na2Ta4O11 nanoparticles, let alone the growth of two-dimensional (2D) layered Na2Ta4O11 flake, which may bring innovative properties and promising applications. Here, the 2D thin-layer Na2Ta4O11 flake was first produced by chemical vapor deposition (CVD) method, with the smallest thickness reported currently. We have also synthesized 2D Na2Ta4O11 flake over 100 μm, which was the largest value over the 2D level reported to date. Our work proposed novel strategies to synthesize other 2D metal oxide material and endow the Na2Ta4O11 more properties and applications.