Synergistical Tuning Interface Barrier and Phonon Propagation in Au-Sb2Te3 Nanoplate for Boosting Thermoelectric Performance.

Synergistical Tuning Interface Barrier and Phonon Propagation in Au-Sb2Te3 Nanoplate for Boosting Thermoelectric Performance.
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DOI:
10.1021/acs.jpclett.9b02312
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发表时间:
2019-08
期刊:
The journal of physical chemistry letters
影响因子:
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通讯作者:
Wenwen Zheng;Yubo Luo;Yong Liu;Jing Shi;R. Xiong;Ziyu Wang
Wenwen Zheng;Yubo Luo;Yong Liu;Jing Shi;R. Xiong;Ziyu Wang
中科院分区:
其他
文献类型:
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作者:
Wenwen Zheng;Yubo Luo;Yong Liu;Jing Shi;R. Xiong;Ziyu Wang

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低维金属-半导体纳米复合材料有望实现电学和热学性能的解耦,从而获得更高的热电性能。在本研究中,我们合理设计了一种独特的0D-2D Au-Sb2Te3结构,该结构具有良好的界面屏障和增强的声子散射,从而协同优化了电学和热性能。在Sb2Te3纳米板上原位生长约10 nm的Au纳米颗粒,与传统的块体相比,可以更好地操纵电子和声子输运。Au和Sb2Te3之间的能垒有效地过滤了低能空穴,而Au纳米粒子则有效地阻碍了中长波长声子的传播。结果,这种独特的0D-2D Au-Sb2Te3复合材料的电导率和塞贝克系数同时增加,晶格导热系数降低,使得1 mol% Au-Sb2Te3复合材料的ZT值(523 K时为~0.8)比原始的Sb2Te3 (523 K时为~0.39)增加了一倍。这种自组装异质结构为设计其他低维金属半导体纳米热电组件提供了方向。
Engineering of low dimensional metal-semiconductor nanocomposites is expected to decouple electrical and thermal property, leading to substantially higher thermoelectric property. In this study, we rationally design a unique 0D-2D Au-Sb2Te3 architecture with beneficial interface barrier and strengthened phonon scattering, resulting in synergistically optimized electrical and thermal properties. In-situ growth of Au nanoparticles ~10 nm on Sb2Te3 nanoplates enables better manipulation of electron and phonon transport compared to traditional bulks. The energy barrier between Au and Sb2Te3 effectively filters low energy holes, while the Au nanoparticles competently hinder the propagation of mid-to-long wavelength phonons. As a result, this unique 0D-2D Au-Sb2Te3 composites exhibit a concurrent increase in electrical conductivity and Seebeck coefficient, and a decrease in lattice thermal conductivity, which allows a double of ZT value (~0.8 at 523 K) for 1 mol% Au-Sb2Te3 composites with respect to the pristine Sb2Te3 (~0.39 at 523 K). This self-assembled heterostructure provides a direction to design other low-dimensional metal-semiconductor nano-assemblies for thermoelectric application.