Emission from the higher-order excitons in ZnO films grown by laser molecular-beam epitaxy
Emission from the higher-order excitons in ZnO films grown by laser molecular-beam epitaxy
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DOI：
10.1063/1.1748847
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发表时间：
2004-04
影响因子：
4
通讯作者：
A. Tsukazaki;A. Ohtomo;M. Kawasaki;T. Makino;C. Chia;Y. Segawa;H. Koinuma
中科院分区：
文献类型：
--
作者：
A. Tsukazaki;A. Ohtomo;M. Kawasaki;T. Makino;C. Chia;Y. Segawa;H. Koinuma
采用激光分子束外延技术在晶格匹配的ScAlMgO4衬底上生长了ZnO外延薄膜。样品的特征在于低温光致发光（PL），吸收和反射率测量。在低于40 K的温度下观察到高阶（n=2）激子（A激子）的光致发光。吸收光谱中包含的线和反射光谱表现出异常，被分配到激发态（n= 2，3）的A和B激子。采用退火的ZnO或MgZnO缓冲层可以显著提高器件的光学质量。
Epitaxial ZnO thin films were grown by laser molecular-beam epitaxy on lattice-matched ScAlMgO4 substrates following the deposition and annealing of suitable buffer layers. The samples were characterized by low-temperature photoluminescence (PL), absorption, and reflectivity measurements. PL from higher order (n=2) excitons (A exciton) was observed at temperatures lower than 40 K. The absorption spectrum contained lines and the reflection spectrum exhibited anomalies that were assigned to the excited-states (n=2,3) of A and B excitons. The optical quality could be improved dramatically by using annealed ZnO or MgZnO buffer layers.