Phase-selective hydrothermal synthesis of Cu2ZnSnS4 nanocrystals: the effect of the sulphur precursor

Phase-selective hydrothermal synthesis of Cu2ZnSnS4 nanocrystals: the effect of the sulphur precursor
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Cu2ZnSnS4 纳米晶体的相选择水热合成:硫前驱体的影响

DOI:
10.1039/c3ce42606h
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发表时间:
2014-01-01
期刊:
影响因子:
3.1
通讯作者:
Wang, Hongxia
Wang, Hongxia
中科院分区:
化学3区
文献类型:
--
作者:
Vincent Tiing Tiong;Zhang, Yi;Wang, Hongxia

文献摘要

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采用一步水热法合成了Cu2ZnSnS4(CZTS)纳米晶,制备了厚度均匀、表面光滑的高质量Cu2ZnSnS4薄膜。结果表明,水热反应中所用的硫前驱体的性质对合成的水热产物的组成纯度和晶体结构均有显著影响。当在水热反应的前体溶液中使用有机硫前体如硫代乙酰胺和硫脲时,获得了由纤锌矿和锌黄锡矿晶体结构组成的CZTS材料,而当使用Na2S作为硫前体时,制备了纯锌黄锡矿相CZTS纳米晶体。用一种简单的刮涂法在钼钠钙玻璃基片上制备了厚度均匀(1.7 μ m)的CZTS薄膜。热处理对薄膜的影响研究表明,当材料在550 ℃退火时,纤锌矿CZTS材料完全转变为锌黄锡矿相。在600 ℃退火的CZTS膜的表面上发现大晶粒(尺寸约2 μ m)。对CZTS薄膜的光响应的评估表明,与在550 ℃退火的膜相比,在600 ℃退火的膜产生更高且非常稳定的光电流。
High quality Cu2ZnSnS4 (CZTS) films with uniform thickness and smooth surface were prepared using nanocrystals synthesized by a one-step hydrothermal method. It is found that the nature of the sulphur precursor used in the hydrothermal reaction influences both the compositional purity and the crystal structure of the synthesized hydrothermal product significantly. The CZTS material consisting of both wurtzite and kesterite crystal structures was obtained when using an organic sulfur precursor such as thioacetamide and thiourea in the precursor solution of the hydrothermal reaction while the pure kesterite phase CZTS nanocrystals were made when Na2S was employed as the sulphur precursor. CZTS thin films deposited on a Mo-soda lime glass substrate with uniform thickness (1.7 mu m) were made by a simple doctor-blading method. The investigation of the effect of thermal treatment on the film has indicated that the wurtzite CZTS material was completely transformed to the kesterite phase when the material was annealed at 550 degrees C. Large grains (around 2 mu m in size) were found on the surface of the CZTS film which was annealed at 600 degrees C. The evaluation of the photoresponse of the CZTS thin films has showed that a higher and very stable photocurrent was generated by the film annealed at 600 degrees C compared to the film annealed at 550 degrees C.