Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications
Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications
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DOI：
10.1109/ted.2016.2557811
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发表时间：
2016-06-01
影响因子：
3.1
通讯作者：
Chen, Kevin J.
中科院分区：
文献类型：
--
作者：
Wei, Jin;Jiang, Huaping;Chen, Kevin J.
GaN/SiC混合场效应晶体管（HyFET）被提出作为高压功率器件，其提供高迁移率横向AlGaN/GaN沟道以降低沟道电阻，以及提供垂直SiC漂移区以维持高关断状态电压。的HyFET的性能进行了评估，通过数值器件模拟。与传统的SiC MOSFET相比，HyFET具有很低的罗恩、C-GD和栅电荷。HyFET的品质因数Q（G）x R-ON和Q（GD）x R-ON显著提高。
A GaN/SiC hybrid field-effect transistor (HyFET) is proposed as a high-voltage power device that provides a high-mobility lateral AlGaN/GaN channel to reduce the channel resistance and a vertical SiC drift region to sustain the high OFF-state voltage. The performance of the HyFET is evaluated by numerical device simulations. Compared with the conventional SiC MOSFET, the HyFET exhibits a greatly reduced RON together with a low C-GD and low gate charges. The figures of merit Q(G) x R-ON and Q(GD) x R-ON of the HyFET are dramatically improved.