Crystal and electronic structure of new organic semiconductors with rare-earth metal counter-anions
Crystal and electronic structure of new organic semiconductors with rare-earth metal counter-anions
复制标题
稀土金属抗衡阴离子新型有机半导体的晶体和电子结构
DOI：
10.1070/mc2001v011n05abeh001477
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发表时间：
2001
影响因子：
1.9
通讯作者：
O. Dyachenko
中科院分区：
文献类型：
--
作者：
O. Kazheva;M. Gener;V. Gritsenko;N. Kushch;E. Canadell;O. Dyachenko
用X射线晶体学方法研究了295和110 K下新分子半导体（ET）5[M（NCS）6NO3]·EtOH（M = Dy，Y）的电子能带结构.
The new molecular semiconductors (ET)5[M(NCS)6NO3]·EtOH (M = Dy, Y) have been studied by X-ray crystallography at 295 and 110 K, and the electronic band structure of these salts has been examined.