Enhanced Optical and Thermal Performance of Eutectic Flip-Chip Ultraviolet Light-Emitting Diodes via AlN-Doped-Silicone Encapsulant
Enhanced Optical and Thermal Performance of Eutectic Flip-Chip Ultraviolet Light-Emitting Diodes via AlN-Doped-Silicone Encapsulant
复制标题
通过 AlN 掺杂硅密封剂增强共晶倒装芯片紫外发光二极管的光学和热性能
DOI：
10.1109/ted.2016.2637445
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发表时间：
2017
影响因子：
3.1
通讯作者：
Chen Changqing
中科院分区：
文献类型：
--
作者：
Liang Renli;Wu Feng;Wang Shuai;Chen Qian;Dai Jiangnan;Chen Changqing
研究了共晶倒装法制备的氮化物基紫外发光二极管的光学和热学性能。提出了一种新的封装结构，通过引入一个薄的封装层掺杂0.4重量%的氮化铝纳米粒子（NPs）和均匀的石英透镜同时。实验结果表明，与仅采用硅树脂封装层相比，本文提出的封装结构可以显著提高光输出功率，降低结温，增大出射角。当纳米粒子的浓度从0.1增加到0.4wt%时，在800 mA的正向电流下，光输出功率从7.6%增加到17.4%。同时，结温降低了5.7 °C，而发射角增加了11.3°。此外，发现光输出功率的增强依赖于NPs的浓度，并且在0.4wt%的浓度下显示出最大值。增强的光输出功率归因于额外的光散射和增加的平均折射率导致的纳米粒子在拟议的封装结构中引入。
This paper investigated the optical and thermal performance of the nitride-based ultraviolet light-emitting diodes fabricated by the eutectic flip-chip method. A new packaging structure was proposed by introducing a thin encapsulation layer doped with 0.4 wt% AlN nanoparticles (NPs) and uniform quartz lens simultaneously. Experimental results showed that the packaging structure proposed in this paper could significantly enhance the light output power, reduce the junction temperature, and increase the emission angle compared with the encapsulation layer consisting silicone only. When the NPs concentration increased from 0.1 to 0.4 wt%, the light output power increased from 7.6% to 17.4% at the forward current of 800 mA. Meanwhile, the junction temperature decreased by 5.7 °C, while the emission angle increased by 11.3°. What is more, it was found that the enhancement of light output power depended on the NPs concentration and showed the maximum at the concentration of 0.4 wt%. The enhanced light output power was attributed to the additional light scattering and the increased average refractive index resulted from the NPs introduced in the proposed package structure.