NANOCONFINED ELECTROCHEMICAL NUCLEATION OF CRYSTALLINE MOLECULAR MONOLAYERS ON GRAPHITE SUBSTRATES
NANOCONFINED ELECTROCHEMICAL NUCLEATION OF CRYSTALLINE MOLECULAR MONOLAYERS ON GRAPHITE SUBSTRATES
复制标题
石墨基底上单分子层晶体的纳米限域电化学成核
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
M. Ward
中科院分区：
文献类型：
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作者：
D. Hooks;C. Yip;M. Ward
实时原位原子力显微镜（AFM）已被用来检查的电化学成核的外延取向，结晶单分子膜的双（乙撑二硫基）四硫富瓦烯三碘，（ET）2I3，在高度取向的热解石墨电极的底面装饰有圆形的，单层深的坑通过热蚀刻创建。与相邻的阶地相比，凹坑中的单层的成核被抑制。凹坑填充所需的时间与凹坑直径成反比，在直径小于100 nm的凹坑中完全抑制成核。坑中生长的抑制可归因于由坑边缘产生的表面不连续性，其防止ET生长单元从周围平台向坑的表面扩散。因此，核在凹坑中的生长受到通过直接从溶液扩散到达凹坑中的ET的量的限制。对凹坑中骨料生长的数值模拟说明了三种骨料的影响。
Real-time in situ atomic force microscopy (AFM) has been employed to examine the electrochemical nucleation of epitaxially oriented, crystalline monolayers of bis(ethylenedithiolo)tetrathiafulvalene triiodide, (ET)2I3, on the basal plane of highly oriented pyrolytic graphite electrodes decorated with circular, single-layer-deep pits created by thermal etching. The nucleation of the monolayers in the pits is inhibited compared to the contiguous terraces. The time required for pit filling scales inversely with pit diameter, with nucleation completely suppressed in pits with diameters less than 100 nm. The suppression of growth in the pits can be attributed to the surface discontinuity created by the pit edge that prevents surface diffusion of ET growth units from the surrounding terrace to the pit. Consequently, growth of nuclei in the pits is limited by the amount of ET arriving in the pit by diffusion directly from solution. Numerical simulations of aggregate growth in pits illustrate the influences of tr...