Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics
Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics
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DOI：
10.1115/1.4047100
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发表时间：
2020-05
影响因子：
1.6
通讯作者：
J. S. Lundh;Yiwen Song;B. Chatterjee;A. Baca;R. Kaplar;A. Armstrong;A. Allerman;B. Klein;D. Kendig;Hyungtak Kim;Sukwon Choi
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文献类型：
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作者：
J. S. Lundh;Yiwen Song;B. Chatterjee;A. Baca;R. Kaplar;A. Armstrong;A. Allerman;B. Klein;D. Kendig;Hyungtak Kim;Sukwon Choi
研究人员一直在广泛研究宽带隙（WBG）半导体材料，如氮化镓（GaN），目的是在基于硅（Si）的现有器件的基础上，在尺寸、重量和功率方面实现改进。然而，WBG器件技术的工作功率密度的增加和面积占用的减少会导致严重的自热，最终会通过性能下降、可靠性问题和故障限制器件的运行。通常，在稳态直流测量条件下操作WBG器件时，使用单一测量技术研究WBG器件的自加热。然而，对于开关应用，这种稳态热特性可能失去意义，因为在快速瞬态开关事件中会发生高功耗。因此，在瞬态测量条件下对WBG器件进行探测，有助于在实际应用中更好地了解这些系统的热动力学。本文采用热反射热成像和拉曼测温技术研究了AlGaN/GaN高电子迁移率晶体管（HEMT）的瞬态热动力学。此外，还讨论了热反射热成像等迭代脉冲测量方法在确定器件稳态工作温度方面的应用。这些研究随后进行了瞬态热表征，以准确地探测从稳态到亚微秒脉冲条件下的自加热，使用热反射热成像和拉曼测温，时间分辨率低至15 ns。
Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since the high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to submicrosecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.