High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
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DOI：
10.1143/jjap.43.l1241
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发表时间：
2004-09
影响因子：
1.5
通讯作者：
H. Hirayama;K. Akita;T. Kyono;Takao Nakamura;K. Ishibashi
中科院分区：
文献类型：
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作者：
H. Hirayama;K. Akita;T. Kyono;Takao Nakamura;K. Ishibashi
我们展示了高效率的紫外（UV）发光二极管（LED）的发射波长为352 nm，使用四元InAlGaN多量子阱（MQW）发射区。使用GaN衬底以消除穿透位错的影响。通过四元InAlGaN MQW的阴极发光（CL）图像，即使在无位错区域中也清楚地观察到由于In偏析引起的发射波动，这被认为有助于实现高效UV发射。在室温（RT）连续工作条件下，获得的最大紫外光输出功率高达7.4mW。最大的外量子效率（EQE）为1.1%，注入电流为50 mA，这是有史以来获得的最高EQE为350 nm波段的UV LED与顶部发射几何形状。
We demonstrated high-efficiency ultraviolet (UV) light-emitting diodes (LEDs) with an emission wavelength of 352 nm using a quaternary InAlGaN multiple-quantum-well (MQW) emitting region. GaN substrates were used in order to eliminate the effects of threading dislocations. Emission fluctuation due to In segregation was clearly observed even in a dislocation-free area by a cathode luminescence (CL) image of a quaternary InAlGaN MQW, which is considered to contribute to the achievement of a high-efficiency UV emission. The maximum UV output power obtained was as high as 7.4 mW under room temperature (RT) CW operation. The maximum external quantum efficiency (EQE) was 1.1% with an injection current of 50 mA, which is the highest EQE ever obtained for 350-nm-band UV LEDs with a top-emission geometry.