Control of the Anomalous Hall Effect by Doping in Eu1-xLaxTiO3 Thin Films
Control of the Anomalous Hall Effect by Doping in Eu1-xLaxTiO3 Thin Films
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DOI：
10.1103/physrevlett.103.057204
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发表时间：
2009-07-31
影响因子：
8.6
通讯作者：
Tokura, Y.
中科院分区：
文献类型：
--
作者：
Takahashi, K. S.;Onoda, M.;Tokura, Y.
本文研究了Eu1-xLaxTiO3外延薄膜的反常霍尔效应（AHE），该薄膜的能带填充可以通过掺杂x来控制，而不会改变磁化强度。该系统在导带底部有一个简单的带结构，为设计AHE提供了可能。正如预期的那样，异常霍尔电阻率随载流子密度呈非单调变化，并伴随着n = 2.4 x 10(20) cm（-3）附近的符号反转。这开启了通过设计材料、结构和掺杂水平来控制AHE的可能性。
The anomalous Hall effect (AHE) has been studied for epitaxial films of Eu1-xLaxTiO3, in which band filling can be controlled by doping x without undesired changes in magnetization. This system has a simple band structure near the conduction band bottom, which makes it possible to design the AHE. As expected, the anomalous Hall resistivity shows a nonmonotonic change as a function of the carrier density accompanied with the sign reversal around n = 2.4 x 10(20) cm(-3). This opens a possibility to control the AHE by devising the material, structure, and doping level.