Borophene-graphene heterostructures
Borophene-graphene heterostructures
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DOI：
10.1126/sciadv.aax6444
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发表时间：
2019-10-01
期刊：
影响因子：
13.6
通讯作者：
Hersam, Mark C.
中科院分区：
文献类型：
--
作者：
Liu, Xiaolong;Hersam, Mark C.
不同的二维（2D）材料的集成对于纳米电子应用是必不可少的。与垂直堆叠相比，共价横向缝合需要自下而上的合成，导致很少实现2D横向异质结构。由于其多态性和不同的键合几何形状，硼氢化物是一个有前途的候选人的二维异质结构，虽然合适的合成条件尚未得到证明。在这里，我们报告了硼氢化物与石墨烯的横向和纵向整合。地形和空间分辨光谱测量揭示近原子尖锐的横向接口，尽管不完美的晶格和对称匹配。此外，石墨烯下的硼嵌入导致旋转相称的垂直异质结构。硼的丰富的键合配置表明，硼化物可以集成到各种各样的二维异质结构。
Integration of dissimilar two-dimensional (2D) materials is essential for nanoelectronic applications. Compared to vertical stacking, covalent lateral stitching requires bottom-up synthesis, resulting in rare realizations of 2D lateral heterostructures. Because of its polymorphism and diverse bonding geometries, borophene is a promising candidate for 2D heterostructures, although suitable synthesis conditions have not yet been demonstrated. Here, we report lateral and vertical integration of borophene with graphene. Topographic and spatially resolved spectroscopic measurements reveal nearly atomically sharp lateral interfaces despite imperfect crystallographic lattice and symmetry matching. In addition, boron intercalation under graphene results in rotationally commensurate vertical heterostructures. The rich bonding configurations of boron suggest that borophene can be integrated into a diverse range of 2D heterostructures.