Performance of inductively coupled plasma assisted sputtering with internal coil for ferromagnetic CoCrTa film deposition
Performance of inductively coupled plasma assisted sputtering with internal coil for ferromagnetic CoCrTa film deposition
复制标题
内线圈感应耦合等离子体辅助溅射铁磁 CoCrTa 薄膜沉积性能
DOI：
10.1116/1.1627770
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
J. Oyanagi
中科院分区：
文献类型：
--
作者：
K. Okimura;J. Oyanagi
研究了电感耦合等离子体辅助内线圈溅射沉积钴基铁磁性合金薄膜的性能。研究了三种内线圈，即直接接地裸线圈、电容耦合裸线圈和绝缘线圈的薄膜结晶结构和等离子体特性。在1.3Pa的中等工作气压下，在裸线圈系统中获得了高度c轴织构的六角密堆积(HCP)薄膜。极图测量表明，在低温硅衬底上生长的薄膜在c轴织构的hcp晶体中含有小的面心立方相。等离子体诊断表明，高于80V的高等离子体空间势通过具有合适的结晶能量的离子轰击效应而导致高度织构的生长。结果表明，采用电容耦合裸线圈的电感耦合等离子体辅助溅射技术对衬底上薄层的织构生长具有很好的效果。
The performance of inductively coupled plasma (ICP)-assisted sputtering with an internal coil was revealed for deposition of ferromagnetic Co-based alloy films. Three types of internal coil, a directly grounded bare coil, a capacitively coupled bare coil and an insulated coil, were investigated with regard to the crystalline structure of films and plasma characteristics. Highly c-axis textured hexagonal-close-packed (hcp) film growth was achieved in the bare coil system at a medium operating Ar pressure of 1.3 Pa. Pole figure measurements showed that the film grown on a low-temperature Si substrate contained small face-centered-cubic phase in the c-axis textured hcp crystal. Plasma diagnostics suggested that high plasma space potential beyond 80 V caused highly textured growth through the effect of ion bombardment with proper energies for crystallization. The superior capability of ICP-assisted sputtering with a capacitively coupled bare coil was revealed for textured growth in the thin layer on a substra...