Direct growth and photoelectrochemical properties of tungsten oxide nanobelt arrays
Direct growth and photoelectrochemical properties of tungsten oxide nanobelt arrays
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DOI：
10.1088/0957-4484/19/6/065704
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发表时间：
2008-02
期刊：
影响因子：
3.5
通讯作者：
Hua Wang;X. Quan;Yaobin Zhang;Shuo Chen
中科院分区：
文献类型：
--
作者：
Hua Wang;X. Quan;Yaobin Zhang;Shuo Chen
开发了一种通过加热钨片直接生长氧化钨纳米带阵列的单步路线，无需额外的催化剂或反应物。 X射线衍射和拉曼分析表明氧化钨纳米带为单斜晶系。氧化钨纳米带阵列的表面光电压信号和光电流密度清楚地表明其具有高光转换能力。进一步的研究表明，当使用苯酚作为探针分子时，纳米带阵列的光电催化活性高于氧化钨薄膜。
A single-step route was developed for the direct growth of tungsten oxide nanobelt arrays by heating a tungsten sheet without additional catalysts or reactants. X-ray diffraction and Raman analysis indicated that the tungsten oxide nanobelts were monoclinic. The surface photovoltage signal and photocurrent density of the tungsten oxide nanobelt arrays clearly suggested a high photoconversion ability. Further investigation demonstrated that the photoelectrocatalytic activity of the nanobelt arrays was higher than that of a tungsten oxide film when using phenol as the probe molecule.