Lateral growth of GaN by liquid phase electroepitaxy using mesa-shaped substrate
Lateral growth of GaN by liquid phase electroepitaxy using mesa-shaped substrate
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DOI：
10.7567/jjap.55.105502
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发表时间：
2016-09
影响因子：
1.5
通讯作者：
D. Kambayashi;H. Takakura;M. Tomita;M. Iwakawa;Y. Mizuno;T. Maruyama;S. Naritsuka
中科院分区：
文献类型：
--
作者：
D. Kambayashi;H. Takakura;M. Tomita;M. Iwakawa;Y. Mizuno;T. Maruyama;S. Naritsuka
GaN 微通道外延 (MCE) 使用台面形衬底和液相电外延进行。成功获得了平坦且宽的矩形MCE层，该层由顶面和底面的±c面形成。通过这些平面的形成，MCE 生长主要在横向方向上进行。阴极发光测量表明，横向生长的层几乎没有位错，并且台面区域中的位错受到台面的垂直侧的限制。在倾斜侧面的情况下，位错预计会弯曲并扩散到横向生长区域。
GaN microchannel epitaxy (MCE) was performed using a mesa-shaped substrate and liquid phase electroepitaxy. A flat and wide MCE layer was successfully obtained with a rectangular shape, which is formed by ±c-planes on both the top and bottom surfaces. MCE growth proceeded mainly in the lateral direction by the formation of these planes. Cathodoluminescence measurements showed that the laterally grown layers were almost free of dislocations, and that the dislocations in the mesa areas were confined by the vertical sides of the mesas. In the case of inclined sides, the dislocations would be expected to bend and spread into the laterally grown areas.