Uncertainty analysis of two-step and three-step methods for deembedding on-wafer RF transistor measurements
Uncertainty analysis of two-step and three-step methods for deembedding on-wafer RF transistor measurements
复制标题
DOI：
10.1109/ted.2008.926752
复制
发表时间：
2008-08-01
影响因子：
3.1
通讯作者：
Lee, Seonghearn
中科院分区：
文献类型：
--
作者：
Cha, Junyoung;Cha, Jiyong;Lee, Seonghearn
为了研究最常用的去嵌入方法中的去嵌入不确定性，将两步和三步去嵌入的f(Max)和f(T)与需要额外的焊盘打开模式的精确焊盘打开-短路技术的f(Max)和f(T)进行了比较。在实际的Lg=0.13微米的MOSFET中，与考虑分布效应的焊盘打开短路技术相比，这些方法得到了更低的f(Max)和更高的f(T)值.在没有焊盘打开模式的情况下，两步法和三步法的去嵌入不确定性通过一种简单的去嵌入技术来降低，该技术利用特定分裂分数中的外在和本征导纳来减小去嵌入的不确定性.
In order to investigate the deembedding uncertainties in the most commonly used deembedding methods, f(max) and f(T) deembedded from two- and three-step ones are compared with those of an accurate pad-open-short technique requiring an additional pad open pattern. The lower f(max) and higher f(T) values from these deembedding methods than those of the pad-open-short technique considering the distributed effect are obtained in an actual MOSFET with Lg = 0.13 mu m. The deembedding uncertainty of two- and three-step methods is reduced without the pad open pattern by a simple deembedding technique using extrinsic and intrinsic admittances in specific splitting fractions.