Laser-assisted electron emission from gated field-emitters
Laser-assisted electron emission from gated field-emitters
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门控场发射器的激光辅助电子发射
DOI：
10.1016/s0168-9002(02)00333-9
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发表时间：
2002
影响因子：
1.4
通讯作者：
A. Hosono
中科院分区：
文献类型：
--
作者：
H. Ishizuka;Y. Kawamura;K. Yokoo;H. Mimura;H. Shimawaki;A. Hosono
用100 mW连续YAG激光器，在波长532 nm、强度107 W/m2、上升时间4μs的机械斩波条件下，研究了门控场致发射体的电子发射增强效应。当照射640个硅发射器阵列时，发射电流对激光器的开关响应很快。在低栅压下，发射电流的增加与基本发射电流成正比，但随着栅压的增加，基本发射电流接近100μA时，发射电流在103 μA处达到饱和。在低栅极电压下，发射增加与激光功率的平方根成比例，在升高的栅极电压下与激光功率成比例。对于1-和3-尖硅发射器，由于激光器的开-关而引起的电流的上升和下降显示出显著的时间滞后。发射增加的幅度与激光光斑在发射极基极上的位置无关，在基本电流为5μA时，发射增加的幅度可达2μA，而没有饱和的迹象。对这些现象的机理进行了讨论。
Enhancement of electron emission by illumination of gated field-emitters was studied using a 100mW cw YAG laser at a wavelength of 532nm, intensities up to 107W/m2and mechanically chopped with a rise time of 4μs. When shining an array of 640 silicon emitters, the emission current responded quickly to on–off of the laser. The increase of the emission current was proportional to the basic emission current at low gate voltages, but it was saturated at ≈3μA as the basic current approached 100μA with the increase of gate voltage. The emission increase was proportional to the square root of laser power at low gate voltages and to the laser power at elevated gate voltages. For 1- and 3-tip silicon emitters, the rise and fall of the current due to on–off of the laser showed a significant time lag. The magnitude of emission increase was independent of the position of laser spot on the emitter base and reached 2μA at a basic current of 5μA without showing signs of saturation. The mechanisms of these phenomena are discussed.