Investigation of Solids by Means of an Ion-Bombardment Mass Spectrometer
Investigation of Solids by Means of an Ion-Bombardment Mass Spectrometer
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通过离子轰击质谱仪研究固体
DOI：
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发表时间：
1969
期刊：
影响因子：
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通讯作者：
H. Werner
中科院分区：
文献类型：
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作者：
H. Werner
离子轰击质谱仪已被应用于薄层和块状材料的调查。将样品安装在质谱仪的离子源中，并用11 keV能量的氩离子连续轰击。只有那些作为离子直接离开表面的颗粒才能从离子源中提取出来，并根据它们的m/e比进行分离。研究了氧化对离子产额的影响。一种方法已经推导出用于指示金属氧化物存在的浓度作为深度的函数下降。用这种方法，扩散到锗矩阵中的铟的扩散分布被发现是在良好的协议与理论扩散分布，从而证明了离子电流和浓度之间的比例关系，都作为浓度和深度的函数。用我们的测量方法测定的铟在锗中的扩散系数与其他人用不同方法测得的值吻合得很好。
An ion-bombardment mass spectrometer has been applied to the investigation of thin layers and bulk materials. The specimen is mounted in the ion source of the mass spectrometer and bombarded continuously with argon ions of 11 keV energy. Only those particles leaving the surface directly as ions are extracted from the ion source, and are separated according to their m/e ratio. The influence of oxidation on the ion yield has been studied. A method has been derived for indicating metal oxides present in concentrations decreasing as a function of depth. With this method the diffusion profile of indium diffused into a germanium matrix was found to be in good agreement with the theoretical diffusion profile, thus proving the proportionality between ion current and concentration, both as a function of concentration and depth. The coefficient of diffusion of indium in germanium determined from our measurements is in good agreement with the values found by others using methods different from ours.