Characteristics of plasma parameters in sputtering deposition using a powder target
Characteristics of plasma parameters in sputtering deposition using a powder target
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粉末靶材溅射沉积等离子体参数的特性
DOI：
10.1088/1742-6596/518/1/012003
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Y. Suda
中科院分区：
文献类型：
--
作者：
H Kawasaki,D Taniyama;S Takeichi;T Ohshima;Y Yagyu;T Ihara;Y Tanaka;Y. Suda
研究了金属基粉末靶溅射沉积法制备功能薄膜的制备机理，并对等离子体中电子密度和发射强度的分布进行了研究。电子密度和电子温度分别为0.5× 109 ~ 3× 109 cm-9和0.5 ~ 1.5eV。电子密度的径向分布几乎是均匀的，但在电极边缘的电子密度和温度高于中心附近的电源电极。轴向分布表明，电子密度是最高的等离子体/鞘层边界。使用粉末靶的轮廓形状与使用块状靶的轮廓形状几乎相同。
Fabrication mechanisms of functional thin films prepared using a sputtering deposition method with metal-based powder targets were examined and profiles of electron density and emission intensity in the processing plasma were investigated. The electron density and electron temperature were 0.5× 10 9 to 3× 10 9 cm− 9 and 0.5 to 1.5 eV, respectively. The radial profiles of the electron density were almost uniform, but the electron density and temperature at the edge of the electrode were higher than those at the center near the powered electrode. Axial profiles suggested that the electron density was the highest at the plasma/sheath boundary. The profile shape using a powder target was almost the same as that using a bulk target.