Observation of built-in electric field in InP self-assembled quantum dot systems
Observation of built-in electric field in InP self-assembled quantum dot systems
复制标题
InP自组装量子点系统内建电场的观察
DOI：
10.1063/1.123993
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发表时间：
1999
影响因子：
4
通讯作者：
Y. Masumoto
中科院分区：
文献类型：
--
作者：
V. Davydov;I. Ignatiev;H. Ren;S. Sugou;Y. Masumoto
在InP自组装量子点异质结的非线性反射光谱中观察到了强烈的Franz-Keldysh振荡。这些振荡表明约30 kV/cm的内置电场。我们建议，这个领域起源于电荷捕获的点界面上的本征缺陷。受主类本征缺陷态的存在被认为是InP/InGaP界面的一般特征，但在其他具有量子点的结构如InAs/GaAs中没有观察到。
Strong Franz–Keldysh oscillations were observed in the nonlinear reflection spectra of heterostructures with InP self-assembled quantum dots. These oscillations manifest a built-in electric field of about 30 kV/cm. We propose that this field originates from electric charge captured by the intrinsic defects on the dot interface. The presence of acceptor-like intrinsic defect states is found to be a general feature of the InP/InGaP interface but was not observed in other structures with quantum dots such as InAs/GaAs.