Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots
Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots
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DOI：
10.1063/1.2743893
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发表时间：
2007-06-01
影响因子：
3.2
通讯作者：
Bimberg, D.
中科院分区：
文献类型：
--
作者：
Winkelnkemper, M.;Seguin, R.;Bimberg, D.
报告了单个 InGaN/GaN 量子点 (QD) 的阴极发光测量。观察到每个 QD 具有多达 5 条发射线的复杂光谱。这些线沿正交晶体方向 [11 (2) over bar0] 和 [(2) over bar 100] 偏振。现实的八能带 k(.)p 电子结构计算表明，线的极化可以通过涉及由 A 或 B 价带形成的空穴态的激子复合来解释。 (c) 2007 年美国物理研究所。
Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [11 (2) over bar0] and [(2) over bar 100]. Realistic eight-band k(.)p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole states which are formed either by the A or the B valence band. (c) 2007 American Institute of Physics.