Surface Structure of Sc-O/W(100) System used as Schottky Emitter at High Temperature
Surface Structure of Sc-O/W(100) System used as Schottky Emitter at High Temperature
复制标题
DOI：
10.1143/jjap.43.6352
复制
发表时间：
2004-09
影响因子：
1.5
通讯作者：
S. Iida;Y. Nakanishi;T. Nagatomi;Y. Takai
中科院分区：
文献类型：
--
作者：
S. Iida;Y. Nakanishi;T. Nagatomi;Y. Takai
在1500 K（Sc-O/W（100）发射体的工作温度）下，通过低能电子衍射、俄歇电子能谱和功函数测量对Sc-O/W（100）系统的表面进行了表征。为此，新开发了带加热器的样品保持器。此外，还将差示测量方法应用于低能电子衍射。结果表明，在1700 K下加热可形成功函数为3.2 eV的p（1×1）-Sc-O/W（100）表面。
The surface characterization of the Sc–O/W(100) system was performed by low-energy electron diffraction, Auger electron spectroscopy and work function measurement at 1500 K, the operating temperature of the Sc–O/W(100) emitter. For this, a sample holder with a heater was newly developed. In addition, the differential measurement method was applied to low-energy electron diffraction. The present results reveal that the p(1×1)-Sc–O/W(100) surface having a work function of 3.2 eV is formed by heating at 1700 K.