Epitaxial growth of N delta doped Si films on Si(1 0 0) by alternately supplied NH3 and SiH4
Epitaxial growth of N delta doped Si films on Si(1 0 0) by alternately supplied NH3 and SiH4
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DOI：
10.1016/j.apsusc.2003.08.034
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发表时间：
2004-03
期刊：
影响因子：
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通讯作者：
Youngcheon Jeong;M. Sakuraba;J. Murota
中科院分区：
文献类型：
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作者：
Youngcheon Jeong;M. Sakuraba;J. Murota
采用超净低压化学气相沉积（LPCVD）技术，研究了交替供给NH3和SiH 4的Si外延生长中N原子层掺杂。在500 Pa和400°C下，用NH3处理可得到N含量为3× 1014 cm-2的原子层级氮化Si（100）。通过随后在25 Pa和500°C下暴露于SiH 4，Si在N量为3× 1014 cm −2的氮化Si（100）上外延生长。实现了由3× 1014 cm-2的N层和3.0nm的Si侧墙组成的多层N掺杂Si薄膜的高质量外延生长。另一方面，在0.5nm的Si间隔物的情况下，N掺杂的Si膜的结晶性由于在第二氮化之后具有Si_3N_4结构的N原子的增加而劣化。
Atomic-layer doping of N in Si epitaxial growth by alternately supplied NH3and SiH4was investigated using an ultra-clean low-pressure chemical vapor deposition (LPCVD). Atomic layer order nitrided Si(100) with N amount of 3×1014cm−2are formed by NH3exposure at 500Pa and 400°C. By subsequent SiH4exposure at 25Pa and 500°C, Si is epitaxially grown on the nitrided Si(100) with N amount of 3×1014cm−2. High quality epitaxial growth of the multi-layer N-doped Si film composed of the N layers of 3×1014cm−2and the 3.0nm Si spacer is achieved. On the other hand, in case of 0.5nm Si spacer, the crystallinity of N-doped Si film is degraded by the increase of N atoms with Si3N4structure after the second nitridation.