Comparison of RSG-MOSFET and capacitive MEMS resonator detection
Comparison of RSG-MOSFET and capacitive MEMS resonator detection
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DOI：
10.1049/el:20047409
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发表时间：
2005-03
影响因子：
1.1
通讯作者：
N. Abelé;V. Pott;K. Boucart;F. Casset;K. Segueni;P. Ancey;A. Ionescu
中科院分区：
文献类型：
--
作者：
N. Abelé;V. Pott;K. Boucart;F. Casset;K. Segueni;P. Ancey;A. Ionescu
对MOSFET和双金属板电容技术在MEMS谐振器和传感器振动检测中的应用进行了仿真比较。提出了一种新的谐振型悬栅MOSFET(RSG-MOSFET)分析模型，用于模拟谐振型器件在静电激励下的机械和电学行为。研究表明，与传统的电容检测相比，基于MOS的检测具有更大的信号放大优势，特别是对于窄波束谐振器。
A simulation comparison of MOSFET and double-metal-plate capacitive techniques for vibration detection of MEMS resonator and sensor applications is reported. A novel resonant suspended-gate MOSFET (RSG-MOSFET) analytical model is developed and used for simulating the mechanical and electrical behaviour of the resonant device under electrostatic actuation. It is demonstrated that a MOS-based detection offers signal amplification advantages over conventional capacitive detection especially for narrow beam resonators.